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| (R) STPS40L45CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n A1 K A2 2 x 20 A 45 V 150 C 0.49 V n n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE RATED A1 K A2 A2 K A1 TO-220AB STPS40L45CT TO-247 STPS40L45CW DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 130C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 45 30 20 40 230 2 3 - 65 to + 150 150 10000 Unit V A A A A A C C V/s tp = 10 ms Sinusoidal tp = 2 s square F = 1kHz tp = 100 s square dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth(j - a) 1/5 November 1999 - Ed: 1 STPS40L45CT/CW THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.5 0.8 0.1 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0105 IF2(RMS) IF = 20 A IF = 20 A IF = 40 A IF = 40 A 0.6 0.42 VR = VRRM 40 Min. Typ. Max. 0.8 130 0.53 0.49 0.69 0.7 Unit mA mA V VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 IF(av) (A) =tp/T T Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode) IF(av)(A) = 0.1 = 0.05 = 0.2 = 0.5 =1 tp 10 12 14 16 18 20 22 24 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15C/W T =tp/T tp Tamb(C) 50 75 100 125 150 0 25 2/5 STPS40L45CT/CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 250 225 200 175 150 125 100 75 50 IM 25 0 1E-3 1.0 0.8 0.6 Tc=25C = 0.5 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 0.4 Tc=75C = 0.2 = 0.1 T 0.2 t =0.5 t(s) 1E-2 1E-1 Tc=125C Single pulse tp(s) 1E-3 1E-2 1E+0 0.0 1E-4 =tp/T tp 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) 1E+3 Tj=150C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 F=1MHz Tj=25C 1E+2 1E+1 1E+0 1E-1 1E-2 Tj=125C 1.0 Tj=75C Tj=25C 0.1 VR(V) 0 5 10 15 20 25 30 35 40 45 VR(V) 1 10 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 1000 100 Typical values Tj=150C Tj=125C 10 Tj=75C Tj=25C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3/5 STPS40L45CT/CW PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. n n n Cooling method : C Recommended torque value : 0.55m.N Maximum torque value : 0.70 m.N 4/5 STPS40L45CT/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 n n n Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering type Marking Package TO-220AB TO-247 Weight 2g 4.4g Base qty 50 30 Delivery mode Tube Tube STPS40L45CT STPS40L45CT STPS40L45CW STPS40L45CW n Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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